A Product Line of
Diodes Incorporated
DMC4050SSD
10,000
10,000
C iss
1,000
T A = 150°C
1,000
T A = 125°C
C oss
100
100
10
C rss
f = 1MHz
10
1
T A = 85°C
T A = 25°C
0
5 10 15 20 25
30
0
5 10 15 20 25 30 35
40
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
10
8
6
4
2
V DS = 20V
I D = 12A
0
0
5
10 15 20 25 30 35
40
Q g , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R θ JA (t) = r(t) * R θ JA
D = 0.02
R θ JA = 94°C/W
0.01
D = 0.01
P(pk)
t 1
D = 0.005
t 2
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 2
/t
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t 1 , PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
DMC4050SSD
Document number: DS33310 Rev. 2 - 2
6 of 11
www.diodes.com
March 2011
? Diodes Incorporated
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